FDN5630
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Краткое описание:
N-CH MOSFET 60V 1.7A SOT-23 100mR
Дополнительная информация
N-channel MOSFET transistor for switching applications. Features a 60V drain-source breakdown voltage and a continuous drain current of 1.7A. Offers a maximum drain-source on-resistance of 100mR at a nominal gate-source voltage of 2.4V. Packaged in a SOT-23 (TO-236-3) surface-mount package with gull-wing terminals. Operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 0.94mm |
| Length | 2.92mm |
| Series | PowerTrench® |
| Current | 17A |
| Voltage | 60V |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Nominal Vgs | 2.4V |
| Termination | SMD/SMT |
| JESD-30 Code | R-PDSO-G3 |
| Package/Case | TO-236-3 |
| Package Shape | Rectangular |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Current Rating | 1.7A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| Terminal Finish | Tin |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Threshold Voltage | 2.4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Package Body Material | Plastic |
| Transistor Application | SWITCHING |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 73mR |
| Moisture Sensitivity Level | 1 |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.7A |
| Peak Reflow Temperature (Cel) | 260°C |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 100MR |
| Drain to Source Breakdown Voltage | 60V |
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