FDN86246

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FDN86246 - Onsemi
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Краткое описание: N-Channel MOSFET 150V 1.6A 261mR TO-236-3 SMT
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, single element configuration, designed for surface mount applications. Features a 150V drain-to-source breakdown voltage and 150V drain-to-source voltage (Vdss). Offers a continuous drain current (ID) of 1.6A with a maximum drain-to-source resistance (Rds On) of 261mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a TO-236-3 case, supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 2.92mm
Height 0.94mm
Length 1.4mm
Series PowerTrench®
Weight 0.03g
Polarity N-CHANNEL
Fall Time 2.9ns
Packaging Tape and Reel
Rds On Max 261mR
Nominal Vgs 3.4V
Package/Case TO-236-3
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 225pF
Power Dissipation 1.5W
Threshold Voltage 3.4V
Number of Elements 1
Turn-On Delay Time 4.5ns
Radiation Hardening No
Turn-Off Delay Time 8ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 261mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.6A
Drain to Source Voltage (Vdss) 150V
Drain to Source Breakdown Voltage 150V

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