FDP047N10
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Краткое описание:
N-Channel MOSFET, 100V, 164A, 4.7mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 164A continuous drain current. This single-element MOSFET offers a low 4.7mΩ drain-source on-resistance and a maximum power dissipation of 375W. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 174ns and fall time of 244ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | PowerTrench® |
| Weight | 2.421g |
| Polarity | N-CHANNEL |
| Fall Time | 244ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.7mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 15.265nF |
| Power Dissipation | 375W |
| Threshold Voltage | 3.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 174ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 344ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 164A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.7MR |
| Drain to Source Breakdown Voltage | 100V |
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