FDP10N60NZ
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Краткое описание:
600V 10A N-Channel Power MOSFET TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 10A continuous drain current. This UniFET II series component offers a low 750mΩ Rds On (max) and 185W max power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a 3V threshold voltage. Key switching parameters include 25ns turn-on delay, 50ns fall time, and 70ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | UniFET-II™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.475nF |
| Power Dissipation | 185W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 185W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 640mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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