FDP120N10

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FDP120N10 - Onsemi
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Краткое описание: N-Channel MOSFET 100V 74A 12mR TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 74A continuous drain current. This single-element transistor offers a low 12mΩ drain-source on-resistance and a maximum power dissipation of 170W. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and boasts a 2.5V threshold voltage. Key switching characteristics include a 27ns turn-on delay and a 15ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 16.51mm
Length 10.67mm
Series PowerTrench®
Weight 1.8g
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 12mR
Package/Case TO-220
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 5.605nF
Power Dissipation 170W
Threshold Voltage 2.5V
Number of Elements 1
Turn-On Delay Time 27ns
Radiation Hardening No
Turn-Off Delay Time 39ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 170W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 12mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 74A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 12MR
Drain to Source Breakdown Voltage 100V

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