FDP16AN08A0

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FDP16AN08A0 - Onsemi
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Краткое описание: N-Channel MOSFET 75V 58A 16mR TO-220AB
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET featuring 75V drain-source breakdown voltage and 58A continuous drain current. This single-element transistor offers a low 16mΩ drain-source on-resistance and 135W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C. Key switching characteristics include an 8ns turn-on delay and 30ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Series PowerTrench®
Weight 1.8g
Polarity N-CHANNEL
Fall Time 30ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 16mR
Package/Case TO-220AB
Current Rating 58A
RoHS Compliant Yes
DC Rated Voltage 75V
Package Quantity 400
Input Capacitance 1.857nF
Power Dissipation 135W
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 28ns
Element Configuration Single
Max Power Dissipation 135W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 13mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 75V
Drain to Source Breakdown Voltage 75V

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