FDP18N50
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N-Channel MOSFET, 500V, 18A, 265mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, UniFET™ series, featuring 500V drain-source breakdown voltage and 18A continuous drain current. Offers a low 265mΩ drain-source on-resistance and 235W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, with typical turn-on delay of 55ns and fall time of 90ns. Operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | UniFET™ |
| Current | 18A |
| Voltage | 500V |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 265mR |
| Package/Case | TO-220AB |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 2.86nF |
| Power Dissipation | 38.5W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 95ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 235W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 265mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 265MR |
| Drain to Source Breakdown Voltage | 500V |
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