FDP20N50
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Краткое описание:
N-Channel MOSFET, 500V, 20A, 230mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This single-element transistor offers a maximum on-resistance of 230mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250W. Key switching characteristics include a turn-on delay time of 95ns and a fall time of 105ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.4mm |
| Length | 10.1mm |
| Series | UniFET™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 105ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 230mR |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.12nF |
| Power Dissipation | 250W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 95ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230MR |
| Drain to Source Breakdown Voltage | 500V |
