FDP3651U

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FDP3651U - Onsemi
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Краткое описание: N-Ch MOSFET 100V 80A 18mR TO-220AB
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET, 100V Drain-Source Breakdown Voltage, 80A Continuous Drain Current, and 18mΩ Max Drain-Source On Resistance. This single-element MOSFET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 255W, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 14ns fall time, with a 4.5V threshold voltage. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Series PowerTrench®
Weight 1.8g
Polarity N-CHANNEL
Fall Time 14ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 18mR
Package/Case TO-220AB
Current Rating 80A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Input Capacitance 5.522nF
Power Dissipation 255W
Threshold Voltage 4.5V
Number of Elements 1
Turn-On Delay Time 15ns
Radiation Hardening No
Turn-Off Delay Time 32ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 255W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 15mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 18MR
Drain to Source Breakdown Voltage 100V