FDP55N06
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Краткое описание:
N-Channel MOSFET, 60V, 55A, 22mR, TO-220
Дополнительная информация
N-channel power MOSFET in a TO-220 package, featuring a 60V drain-source breakdown voltage and a continuous drain current of 55A. This UniFET™ device offers a low drain-source on-resistance of 22mΩ, a maximum power dissipation of 114W, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and a 95ns fall time, with an input capacitance of 1.51nF. The component is lead-free and RoHS compliant, designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | UniFET™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 22mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.51nF |
| Power Dissipation | 114W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 114W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 60V |
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