FDP7N60NZ
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Краткое описание:
600V N-Channel Power MOSFET, 6.5A, 1.25 Ohm, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. This single-element transistor offers a maximum drain-source on-resistance of 1.25Ω at a gate-source voltage of 10V, with a threshold voltage of 3V. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 147W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 17.5ns turn-on delay and a 25ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Series | UniFET-II™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.25R |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 730pF |
| Power Dissipation | 147W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 17.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 147W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.05R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.25MR |
| Drain to Source Breakdown Voltage | 600V |
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