FDP80N06
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Краткое описание:
N-Channel MOSFET, 60V, 80A, 10mR, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 80A. This UniFET™ series component offers a low 10mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 176W. Key switching characteristics include a 32ns turn-on delay and 113ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 16.51mm |
| Length | 10.67mm |
| Series | UniFET™ |
| Weight | 1.8g |
| Polarity | N-CHANNEL |
| Fall Time | 113ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 3.19nF |
| Power Dissipation | 176W |
| Turn-On Delay Time | 32ns |
| Turn-Off Delay Time | 136ns |
| Element Configuration | Single |
| Max Power Dissipation | 176W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 10MR |
| Drain to Source Breakdown Voltage | 60V |
