FDP8874

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FDP8874 - Onsemi
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Краткое описание: N-Channel MOSFET 30V 114A 5.3mR TO-220AB
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET featuring 30V drain-source breakdown voltage and 114A continuous drain current. Offers a low 5.3mΩ maximum drain-source on-resistance and 3.6mΩ typical resistance. Designed for through-hole mounting in a TO-220AB package, this single MOSFET boasts a 110W maximum power dissipation and operates from -55°C to 175°C. Includes fast switching characteristics with 10ns turn-on delay and 31ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.83mm
Height 9.4mm
Length 10.67mm
Series PowerTrench®
Weight 1.8g
Polarity N-CHANNEL
Fall Time 31ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 5.3mR
Package/Case TO-220AB
Current Rating 121A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 50
Input Capacitance 3.13nF
Power Dissipation 110W
Turn-On Delay Time 10ns
Radiation Hardening No
Turn-Off Delay Time 44ns
Element Configuration Single
Max Power Dissipation 110W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 114A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V

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