FDPF18N50T
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Краткое описание:
500V 18A N-CH MOSFET, 265mR, TO-220F
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 18A continuous drain current. This UniFET™ device offers a low 265mΩ drain-source resistance (Rds On Max) and 38.5W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching characteristics with turn-on delay time of 55ns and fall time of 90ns. Operating temperature range is -55°C to 150°C, with lead-free and RoHS compliant construction.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.9mm |
| Height | 16.07mm |
| Length | 10.36mm |
| Series | UniFET™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 265mR |
| Package/Case | TO-220-3 |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 50 |
| Input Capacitance | 2.86nF |
| Power Dissipation | 38.5W |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 95ns |
| Element Configuration | Single |
| Max Power Dissipation | 38.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 265mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
