FDPF5N50NZ
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Краткое описание:
N-Channel MOSFET, 500V, 4.5A, 1.5 Ohm, TO-220F
Дополнительная информация
N-Channel Power MOSFET, UniFET II series, featuring a 500V drain-source breakdown voltage and a continuous drain current of 4.5A. This through-hole component offers a maximum drain-source on-resistance of 1.5Ω and a power dissipation of 30W. Packaged in a TO-220F, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 21ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.87mm |
| Length | 10.16mm |
| Series | UniFET-II™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.5R |
| Nominal Vgs | 5V |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 440pF |
| Power Dissipation | 30W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.38R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.5R |
| Drain to Source Breakdown Voltage | 500V |
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