FDPF8N50NZ
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Краткое описание:
500V 8A N-Channel Power MOSFET TO-220F 850mΩ
Дополнительная информация
N-Channel Power MOSFET featuring 500V drain-to-source breakdown voltage and 8A continuous drain current. This single-element MOSFET offers a low Rds(on) of 770mΩ at 10Vgs and 850mΩ maximum. Designed for through-hole mounting in a TO-220F package, it boasts a maximum power dissipation of 40.3W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns fall time, 17ns turn-on delay, and 43ns turn-off delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 15.87mm |
| Length | 10.16mm |
| Series | UniFET™ |
| Weight | 2.27g |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 850mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 735pF |
| Power Dissipation | 40.3W |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Turn-Off Delay Time | 43ns |
| Element Configuration | Single |
| Max Power Dissipation | 40.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 770mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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