N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. This UniFET™ device offers ultra-fast switching with a 35ns fall time and 20ns turn-on delay, operating with a 5V threshold voltage. Designed for through-hole mounting in a TO-220-3 package, it provides a maximum power dissipation of 34.5W and a low 1.35Ω Rds(on).
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.9mm |
| Height |
16.07mm |
| Length |
10.36mm |
| Series |
UniFET™ |
| Weight |
2.27g |
| Polarity |
N-CHANNEL |
| Fall Time |
35ns |
| Packaging |
Rail/Tube |
| Rds On Max |
1.35R |
| Package/Case |
TO-220-3 |
| RoHS Compliant |
Yes |
| Package Quantity |
50 |
| Input Capacitance |
1.265nF |
| Power Dissipation |
34.5W |
| Threshold Voltage |
5V |
| Turn-On Delay Time |
20ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
55ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
34.5W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
1.15R |
| Gate to Source Voltage (Vgs) |
30V |
| Continuous Drain Current (ID) |
6.5A |
| Drain to Source Voltage (Vdss) |
600V |
| Drain to Source Breakdown Voltage |
600V |