FDS2734
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Краткое описание:
N-Ch MOSFET 250V 3A 117mR SOIC SMD
Дополнительная информация
N-Channel MOSFET, UltraFET Trench technology, 250V Drain-Source Voltage (Vdss), 3A Continuous Drain Current (ID), and 117mΩ Max Drain-Source On-Resistance (Rds On). Features include a 3V Gate Threshold Voltage (Vgs(th)), 2.61nF Input Capacitance, and 2.5W Max Power Dissipation. This surface-mount SOIC package component operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5mm |
| Height | 1.5mm |
| Length | 4mm |
| Series | UltraFET™ |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 117mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 1 |
| Input Capacitance | 2.61nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 23ns |
| Dual Supply Voltage | 250V |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 97mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 117MR |
| Drain to Source Breakdown Voltage | 250V |
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