FDS3672
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N-Ch MOSFET, 100V, 7.5A, 23mR, SOIC, Tape & Reel
Дополнительная информация
N-Channel MOSFET featuring 100V drain-source breakdown voltage and 7.5A continuous drain current. Offers a low 22mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount SOIC package component operates within a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Includes 27ns fall time and 37ns turn-off delay time, packaged on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 7.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 2.015nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 37ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 19MR |
| Drain to Source Breakdown Voltage | 100V |
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