FDS3692
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Краткое описание:
N-Channel MOSFET 100V 4.5A 60mR SOIC SMD
Дополнительная информация
N-Channel PowerTrench® MOSFET featuring 100V drain-source breakdown voltage and 4.5A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance at a nominal 4V gate-source voltage. This surface-mount SOIC package component operates from -55°C to 150°C with a 2.5W maximum power dissipation. Includes fast switching characteristics with 9.8ns turn-on and 26ns fall times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 60mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 746pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.8ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 34ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60MR |
| Drain to Source Breakdown Voltage | 100V |
