FDS4141
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Краткое описание:
P-Channel MOSFET -40V, 10.8A, 13mR, SOIC, Tape & Reel
Дополнительная информация
P-Channel MOSFET featuring a -40V drain-source breakdown voltage and 10.8A continuous drain current. Offers a low 13mΩ drain-source on-resistance at a nominal gate-source voltage of -1.6V. This single-element device is designed for surface mounting in an SOIC package, with a maximum power dissipation of 5W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 10ns and fall time of 12ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13mR |
| Nominal Vgs | -1.6V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 2.67nF |
| Power Dissipation | 5W |
| Threshold Voltage | -1.6V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10.8A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 13MR |
| Drain to Source Breakdown Voltage | -40V |
