FDS4675
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Краткое описание:
P-Channel MOSFET, 40V, -11A, 13mR, SOIC, SMT
Дополнительная информация
P-Channel MOSFET featuring 40V drain-source breakdown voltage and a continuous drain current of 11A. This surface-mount device offers a low drain-source on-resistance of 13mΩ at a nominal gate-source voltage of -1.4V. With a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The component is RoHS compliant and packaged in a tape and reel for efficient assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 13mR |
| Nominal Vgs | -1.4V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | -11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
| Package Quantity | 1 |
| Input Capacitance | 4.35nF |
| Power Dissipation | 2.4W |
| Threshold Voltage | -1.4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Dual Supply Voltage | -40V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 95ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.4W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 13MR |
| Drain to Source Breakdown Voltage | -40V |
