FDS6612A
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N-Channel MOSFET, 30V, 8.4A, 22mΩ, SOIC, PowerTrench
Дополнительная информация
Single N-Channel Power MOSFET, logic level, 30V drain-source breakdown voltage, 8.4A continuous drain current, and 22mΩ maximum drain-source on-resistance. Features a 1.9V threshold voltage, 560pF input capacitance, 7ns turn-on delay, and 22ns turn-off delay. Packaged in SOIC for surface mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 2.5W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 3ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Nominal Vgs | 1.9V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 8.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 560pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.9V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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