FDS6670A
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N-Channel MOSFET, 30V, 13A, 8mR, SOIC, Logic Level
Дополнительная информация
Single N-Channel Logic Level MOSFET, 30V Drain-Source Voltage, 13A Continuous Drain Current, and 8mΩ Maximum Drain-Source On-Resistance. Features include a 1.8V nominal Gate-Source Voltage, 2.5W maximum power dissipation, and a 150°C maximum operating temperature. This surface-mount component, packaged in SOIC, offers fast switching with 15ns turn-on and 40ns turn-off delay times. It is RoHS compliant and designed for efficient power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 13A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 2.22nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8MR |
| Drain to Source Breakdown Voltage | 30V |
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