FDS6890A
Производится
Увеличить
Краткое описание:
Dual N-Ch MOSFET 20V 7.5A 18mR SOIC SMD
Дополнительная информация
Dual N-Channel MOSFET featuring 20V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 18mΩ maximum drain-source on-resistance at a nominal Vgs of 800mV. Designed for surface mount applications in an SOIC package, this component boasts a 2W power dissipation and operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 23ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 800mV |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 7.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1 |
| Input Capacitance | 2.13nF |
| Power Dissipation | 2W |
| Threshold Voltage | 800mV |
| Number of Elements | 2 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 13mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 180mR |
| Drain to Source Breakdown Voltage | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
