FDS6982
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Dual N-Channel MOSFET, 30V, 8.6A, 15mR, SOIC, Surface Mount
Дополнительная информация
Dual N-channel MOSFET for power applications, featuring a 30V drain-source breakdown voltage and 8.6A continuous drain current. This surface-mount component offers a low on-resistance of 15mΩ (max 28mΩ) and a 2W power dissipation. Operating across a wide temperature range of -55°C to 150°C, it boasts a 2.2V threshold voltage and fast switching times with an 18ns fall time and 36ns turn-off delay. Packaged in a SOIC case, this lead-free component is supplied on tape and reel.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 2.2V |
| Package/Case | SOIC |
| Current Rating | 8.6A |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 760pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2.2V |
| Dual Supply Voltage | 30V |
| On-State Resistance | 15mR |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28MR |
| Drain to Source Breakdown Voltage | 30V |
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