FDS6994S
Снят с производства
Увеличить
Краткое описание:
Dual N-Ch MOSFET, 30V, 8.2A, 21mR, SOIC, SyncFET
Дополнительная информация
Dual N-Channel Power MOSFET for notebook power supply applications. Features 30V drain-source breakdown voltage and 8.2A continuous drain current. Offers low 15mΩ drain-source on-resistance at Vgs=10V. Surface mountable in a SOIC package with a maximum power dissipation of 2W. Includes PowerTrench® and SyncFET™ technologies for enhanced performance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench®, SyncFET™ |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
| Package/Case | SOIC |
| Current Rating | 8.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 800pF |
| Power Dissipation | 2W |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
