FDS8638

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FDS8638 - Onsemi
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Краткое описание: 40V 18A N-CH MOSFET SOIC 4.3mR
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET, 40V drain-source breakdown voltage, 18A continuous drain current, and 4.3mΩ maximum drain-source on-resistance. Features a 1.9V threshold voltage and 5.68nF input capacitance. Operates within a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Packaged in an 8-pin SOIC for surface mounting, supplied on tape and reel.
RoHS Compliant
Mount Surface Mount
Width 3.9mm
Height 1.575mm
Length 4.9mm
Series PowerTrench®
Weight 0.13g
Polarity N-CHANNEL
Fall Time 5ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 4.3mR
Nominal Vgs 1.9V
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 5.68nF
Power Dissipation 2.5W
Threshold Voltage 1.9V
Number of Channels 1
Turn-On Delay Time 16ns
Radiation Hardening No
Turn-Off Delay Time 39ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 4.3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 4.3MR
Drain to Source Breakdown Voltage 40V