N-channel MOSFET, 40V drain-source breakdown voltage, 18A continuous drain current, and 4.3mΩ maximum drain-source on-resistance. Features a 1.9V threshold voltage and 5.68nF input capacitance. Operates within a -55°C to 150°C temperature range with 2.5W maximum power dissipation. Packaged in an 8-pin SOIC for surface mounting, supplied on tape and reel.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
3.9mm |
| Height |
1.575mm |
| Length |
4.9mm |
| Series |
PowerTrench® |
| Weight |
0.13g |
| Polarity |
N-CHANNEL |
| Fall Time |
5ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
4.3mR |
| Nominal Vgs |
1.9V |
| Package/Case |
SOIC |
| RoHS Compliant |
Yes |
| Package Quantity |
1 |
| Input Capacitance |
5.68nF |
| Power Dissipation |
2.5W |
| Threshold Voltage |
1.9V |
| Number of Channels |
1 |
| Turn-On Delay Time |
16ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
39ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Single |
| Max Power Dissipation |
2.5W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
4.3mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
18A |
| Drain to Source Voltage (Vdss) |
40V |
| Drain-source On Resistance-Max |
4.3MR |
| Drain to Source Breakdown Voltage |
40V |