FDS8812NZ
Снят с производства
Увеличить
Краткое описание:
N-Channel JFET, 30V, 20A, 4mR Rds On, SOIC
Дополнительная информация
N-channel JFET, single element configuration, surface mount SOIC package. Features 30V drain-to-source breakdown voltage and 4mΩ drain-to-source on-resistance. Continuous drain current capability of 20A with a maximum power dissipation of 2.5W. Operates within a temperature range of -55°C to 150°C, with a fall time of 12ns and turn-off delay of 55ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 6.925nF |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | Unknown |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
