FDS8813NZ
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Краткое описание:
N-Ch MOSFET 30V 18.5A 4.5mΩ SOIC SMT
Дополнительная информация
N-Channel MOSFET, single element configuration, designed for surface mount applications. Features a 30V drain-source breakdown voltage and a continuous drain current of 18.5A. Offers a low drain-source on-resistance of 4.5mΩ at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in SOIC for tape and reel delivery, this RoHS compliant component boasts fast switching characteristics with a 7ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Nominal Vgs | 1.8V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.145nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 1.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.5MR |
| Drain to Source Breakdown Voltage | 30V |
