FDS8878

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FDS8878 - Onsemi
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Краткое описание: N-Channel MOSFET 30V 10.2A 14mR SOIC
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, 30V Vds, 10.2A continuous drain current, and 14mΩ maximum drain-source on-resistance. Features a 2.5W power dissipation, 897pF input capacitance, and operates within a -55°C to 150°C temperature range. This surface-mount component is supplied in a SOIC package on a 2500-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series PowerTrench®
Weight 0.13g
Polarity N-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 14mR
Nominal Vgs 2.5V
Package/Case SOIC
Current Rating 10.2A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 897pF
Power Dissipation 2.5W
Threshold Voltage 2.5V
Number of Elements 1
Turn-On Delay Time 9ns
Radiation Hardening No
Turn-Off Delay Time 45ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 14mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10.2A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 14MR
Drain to Source Breakdown Voltage 30V

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