FDS8880
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Краткое описание:
N-CH MOSFET 30V 11.6A 10mR SOIC Surface Mount
Дополнительная информация
N-channel MOSFET transistor for surface mount applications, featuring a 30V drain-source breakdown voltage and a continuous drain current of 11.6A. This single-element device offers a low drain-source on-resistance of 10mΩ at a nominal gate-source voltage of 2.5V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The SOIC package is supplied on tape and reel, with lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.13g |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 2500 |
| Input Capacitance | 1.235nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Drain to Source Breakdown Voltage | 30V |
