FDS89161LZ
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Краткое описание:
Dual N-Ch MOSFET 100V 2.7A 105mR SOIC
Дополнительная информация
Dual N-Channel MOSFET, 100V Vdss, 2.7A continuous drain current, and 105mΩ Rds On. This surface mount SOIC package features a PowerTrench® shielded gate design for enhanced performance. With a maximum power dissipation of 1.6W and operating temperatures from -55°C to 150°C, it offers 2 N-Channel elements with fast switching times (3.8ns turn-on, 9.5ns turn-off). Packaged in a 2500-piece tape and reel, this RoHS compliant component is ideal for power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 105mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 302pF |
| Power Dissipation | 31W |
| Number of Channels | 2 |
| Turn-On Delay Time | 3.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9.5ns |
| Element Configuration | Dual |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 105mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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