FDS8934A
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P-CH MOSFET, Dual, 20V, 4A, 55mR, SOIC, Surface Mount
Дополнительная информация
Dual P-Channel Power MOSFET in SOIC package, featuring a 20V Drain-Source Voltage (Vdss) and 4A continuous drain current (ID). Offers a low 55mR Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 900mW. Designed for surface mount applications with a compact 5mm length, 4mm width, and 1.5mm height. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including an 8ns turn-on delay and 90ns fall time.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Weight | 0.2304g |
| Polarity | P-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOIC |
| Current Rating | -4A |
| DC Rated Voltage | -20V |
| Package Quantity | 2500 |
| Input Capacitance | 1.13nF |
| Power Dissipation | 2W |
| Turn-On Delay Time | 8ns |
| Turn-Off Delay Time | 260ns |
| Element Configuration | Dual |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | -8V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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