FDS8958A
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Краткое описание:
Dual N/P-Ch MOSFET 30V 28mR SOIC 5A 2W
Дополнительная информация
Dual N & P-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 5A Continuous Drain Current, and 7A Current Rating. Features 28mR Max Drain-Source On Resistance at a nominal 1.9V Gate to Source Voltage. This surface mount SOIC package component operates from -55°C to 150°C with a 2W Max Power Dissipation. Includes 9ns Fall Time and 14ns Turn-Off Delay Time, supplied on a 2500-piece Tape and Reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 1.9V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 575pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1.9V |
| Number of Elements | 2 |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 42mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 30V |
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