FDS8958B
Производится
Увеличить
Краткое описание:
Dual N/P-Ch MOSFET 30V 4.5A 26mR SOIC Tape & Reel
Дополнительная информация
Dual N and P-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 4.5A Continuous Drain Current. Features 26mR Max Drain-Source On Resistance and 51mR Drain to Source Resistance. Operates with a 2V Threshold Voltage and 25V Gate to Source Voltage. Surface mount SOIC package, 1.575mm height, 4.9mm length, 3.9mm width, 0.187g weight. RoHS compliant, 150°C max operating temperature.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.9mm |
| Height | 1.575mm |
| Length | 4.9mm |
| Series | PowerTrench® |
| Weight | 0.187g |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 26mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 540pF |
| Power Dissipation | 1.6W |
| Threshold Voltage | 2V |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 51mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 26MR |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
