Dual N-Channel MOSFET, 30V Drain-Source Breakdown Voltage, 7.5A Continuous Drain Current, and 18mΩ Maximum Drain-Source On-Resistance. Features include a 2.5V Threshold Voltage, 1.27nF Input Capacitance, and fast switching times with 7ns Turn-On Delay and 37ns Fall Time. This surface-mount SOIC package component operates from -55°C to 150°C with a 1.6W Maximum Power Dissipation and is supplied on a 2500-piece tape and reel.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| Width |
4mm |
| Height |
1.5mm |
| Length |
5mm |
| Series |
PowerTrench® |
| Weight |
0.187g |
| FET Type |
2 N-Channel |
| Polarity |
N-CHANNEL |
| Fall Time |
37ns |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Rds On Max |
18mR |
| Package/Case |
SOIC |
| RoHS Compliant |
Yes |
| Package Quantity |
2500 |
| Input Capacitance |
1.27nF |
| Power Dissipation |
1.6W |
| Threshold Voltage |
2.5V |
| Turn-On Delay Time |
7ns |
| Turn-Off Delay Time |
48ns |
| Reach SVHC Compliant |
No |
| Element Configuration |
Dual |
| Max Power Dissipation |
1.6W |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
14mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
7.5A |
| Drain to Source Voltage (Vdss) |
30V |
| Drain-source On Resistance-Max |
18MR |
| Drain to Source Breakdown Voltage |
30V |