FDS8978

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FDS8978 - Onsemi
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Краткое описание: N-Ch MOSFET, 30V, 7.5A, 18mΩ, Dual, SOIC, Tape & Reel
Производитель Onsemi
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual N-Channel MOSFET, 30V Drain-Source Breakdown Voltage, 7.5A Continuous Drain Current, and 18mΩ Maximum Drain-Source On-Resistance. Features include a 2.5V Threshold Voltage, 1.27nF Input Capacitance, and fast switching times with 7ns Turn-On Delay and 37ns Fall Time. This surface-mount SOIC package component operates from -55°C to 150°C with a 1.6W Maximum Power Dissipation and is supplied on a 2500-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 4mm
Height 1.5mm
Length 5mm
Series PowerTrench®
Weight 0.187g
FET Type 2 N-Channel
Polarity N-CHANNEL
Fall Time 37ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 18mR
Package/Case SOIC
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.27nF
Power Dissipation 1.6W
Threshold Voltage 2.5V
Turn-On Delay Time 7ns
Turn-Off Delay Time 48ns
Reach SVHC Compliant No
Element Configuration Dual
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 14mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 18MR
Drain to Source Breakdown Voltage 30V