FDS9926A
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Краткое описание:
Dual N-Ch MOSFET 20V 6.5A 30mR SOIC
Дополнительная информация
Dual N-Channel MOSFET, 20V Vds, 6.5A ID, 30mΩ Rds On Max. Features 2.5V specified PowerTrench® technology for enhanced performance. Surface mount SOIC package with 2500 units per reel. Operating temperature range from -55°C to 150°C, with 2W power dissipation. Includes fast switching times with 8ns turn-on and 15ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.187g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 30mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| Package/Case | SOIC |
| Current Rating | 6.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 2500 |
| Input Capacitance | 650pF |
| Power Dissipation | 2W |
| Threshold Voltage | 1V |
| Number of Elements | 2 |
| Turn-On Delay Time | 8ns |
| Dual Supply Voltage | 20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30MR |
| Drain to Source Breakdown Voltage | 20V |
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