FDS9933
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P-Channel MOSFET, 20V, 5A, 55mR, SOIC, Dual
Дополнительная информация
P-channel MOSFET, dual element configuration, designed for power applications. Features a 20V drain-source breakdown voltage and 5A continuous drain current. Offers a low 55mR drain-source resistance at a 10V gate-source voltage. Packaged in SOIC for surface mounting, with a maximum operating temperature of 175°C. Includes fast switching characteristics with a 25ns fall time and 40ns turn-off delay.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | PowerTrench® |
| Weight | 0.187g |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOIC |
| Current Rating | -5A |
| DC Rated Voltage | -20V |
| Package Quantity | 2500 |
| Input Capacitance | 825pF |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 40ns |
| Element Configuration | Dual |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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