FDS9953A
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Dual P-Channel MOSFET, 30V, -2.9A, 130mΩ, SOIC, Tape & Reel
Дополнительная информация
Dual P-Channel MOSFET, 30V Vds, -2.9A continuous drain current, and 130mΩ maximum drain-source on-resistance. Features include a 2ns fall time, 4.5ns turn-on delay, and 11ns turn-off delay. This surface-mount component operates from -55°C to 150°C with a 2W power dissipation. Packaged in SOIC on a 2500-piece tape and reel, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4mm |
| Height | 1.5mm |
| Length | 5mm |
| Series | PowerTrench® |
| Weight | 0.2304g |
| Polarity | P-CHANNEL |
| Fall Time | 2ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 130mR |
| Package/Case | SOIC |
| Current Rating | -2.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 2500 |
| Input Capacitance | 185pF |
| Power Dissipation | 2W |
| Threshold Voltage | -1.8V |
| Number of Elements | 2 |
| Turn-On Delay Time | 4.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 95mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 2.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 130MR |
| Drain to Source Breakdown Voltage | -30V |
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