FDT3N40TF
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Краткое описание:
N-CH MOSFET 400V 2A SOT-223 Single Dual Drain
Дополнительная информация
N-channel enhancement mode power MOSFET featuring 400V drain-source voltage and 2A continuous drain current. This single DMOS transistor is housed in a 4-pin SOT-223 (TO-261AA) surface-mount plastic package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±30V, 3400mOhm drain-source on-resistance at 10V, and 4.5nC typical gate charge. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2000mW.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-261AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | 5V1P1 |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | SOT-223 |
| AEC Qualified | No |
| Configuration | Single Dual Drain |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.5 |
| Process Technology | DMOS |
| Package Description | Small Outline Transistor |
| Package Family Name | SOT |
| Package Height (mm) | 1.69(Max) |
| Package Length (mm) | 6.5 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.8(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 4.5nC |
| Typical Gate Charge @ Vgs | 4.5@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Drain Source Resistance | 3400@10VmOhm |
| Typical Input Capacitance @ Vds | 173@25VpF |
| Maximum Continuous Drain Current | 2A |
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