FDT457N

Производится
FDT457N - Onsemi
Увеличить
Краткое описание: N-Ch MOSFET, 30V, 5A, 60mΩ, SOT-223, SM
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel MOSFET, single element, surface mount in SOT-223 package. Features 30V drain-source breakdown voltage, 5A continuous drain current, and 60mΩ maximum drain-source on-resistance. Operates with a 1.6V threshold voltage and offers fast switching with 5ns turn-on delay and 3ns fall time. Maximum power dissipation is 3W, with operating temperatures from -55°C to 150°C. This RoHS compliant component is supplied on a 4000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 3.56mm
Height 1.6mm
Length 6.5mm
Weight 0.2502g
Polarity N-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 60mR
Package/Case SOT-223
Current Rating 5A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 2500
Input Capacitance 235pF
Power Dissipation 3W
Threshold Voltage 1.6V
Number of Elements 1
Turn-On Delay Time 5ns
Radiation Hardening No
Turn-Off Delay Time 12ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 60mR
Drain to Source Breakdown Voltage 30V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.