FDU8770
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor
Дополнительная информация
Power Field-Effect Transistor
| RoHS | Compliant |
| Mount | Through Hole |
| Series | PowerTrench® |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| Package/Case | TO-251-3 |
| Current Rating | 35A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 75 |
| Input Capacitance | 3.72nF |
| Power Dissipation | 115W |
| Turn-Off Delay Time | 49ns |
| Max Power Dissipation | 115W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 25V |
| Drain to Source Breakdown Voltage | 25V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
