FDZ375P
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Краткое описание:
P-Channel MOSFET, -20V, -3.7A, 78mΩ, Surface Mount
Дополнительная информация
P-Channel Junction Field-Effect Transistor (JFET) designed for surface mount applications. Features a continuous drain current of 3.7A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 78mΩ at a gate-source voltage of -500mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.7W. Packaged in a compact 1mm x 1mm WL-CSP for efficient board space utilization.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1mm |
| Height | 0.4mm |
| Length | 1mm |
| Series | PowerTrench® |
| Weight | 0.0684g |
| Polarity | P-CHANNEL |
| Fall Time | 84ns |
| Packaging | Tape and Reel |
| Rds On Max | 78mR |
| Nominal Vgs | -500mV |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 865pF |
| Power Dissipation | 1.7W |
| Threshold Voltage | -500mV |
| Turn-On Delay Time | 5.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 138ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 143mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
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