FF1000R17IE4BOSA1
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Краткое описание:
IGBT Insulated Gate Bipolar Transistor 1.7kV 2.45V 5mA 150°C
Дополнительная информация
The FF1000R17IE4BOSA1 is a 1.7kV insulated gate bipolar transistor with a collector-emitter saturation voltage of 2.45V and a maximum collector current of 5mA. It is designed for high-temperature operation up to 150°C and is available in a flange mount package. The device is RoHS compliant and has a maximum power dissipation of 6.25kW. It is packaged in a bulk quantity of two and has a package quantity of 2. The transistor features an NTC thermistor and has a standard input with an input capacitance of 81nF.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Width | 89mm |
| Height | 38mm |
| Length | 250mm |
| Series | PrimePACK™3 |
| Packaging | Bulk |
| Package/Case | Module |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
| Package Quantity | 2 |
| Input Capacitance | 81nF |
| Reach SVHC Compliant | No |
| Max Collector Current | 5mA |
| Max Power Dissipation | 6.25kW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.45V |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 2.45V |
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