FF100R12RT4HOSA1
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Краткое описание:
IGBT 1.2kV 100A 555W FLANGE MOUNT
Дополнительная информация
The FF100R12RT4HOSA1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a continuous collector current of 100A. It has a maximum power dissipation of 555W and operates within a temperature range of -40°C to 150°C. The device is packaged in a flange mount configuration and is compliant with RoHS regulations.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Height | 30.5mm |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Halogen Free | Not Halogen Free |
| Package/Case | Module |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
| Package Quantity | 10 |
| Input Capacitance | 630nF |
| Turn-On Delay Time | 130ns |
| Turn-Off Delay Time | 300ns |
| Max Collector Current | 100A |
| Max Power Dissipation | 555W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Continuous Collector Current | 100A |
| Collector-emitter Voltage-Max | 2.15V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
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