FF200R12KT4HOSA1

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FF200R12KT4HOSA1 - Infineon
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Краткое описание: IGBT Power Module 1.2kV 200A N-CH 1.1kW
Производитель Infineon
Категория Модули
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel IGBT power module featuring 1.2kV Collector-Emitter Breakdown Voltage and 200A Continuous Collector Current, with a maximum of 320A. This module offers 1.75V Collector-Emitter Saturation Voltage and 1.1kW Power Dissipation, operating between -40°C and 150°C. It includes 14nF Input Capacitance and is designed for chassis or panel mounting with screw terminals. The module is RoHS compliant and packaged in bulk.
RoHS Compliant
Input Standard
Mount Chassis Mount, Panel, Screw
Width 61.4mm
Height 30.9mm
Length 106.4mm
Series C
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Halogen Free Not Halogen Free
Package/Case Module
NTC Thermistor No
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 14nF
Power Dissipation 1.1kW
Turn-On Delay Time 160ns
Radiation Hardening No
Turn-Off Delay Time 450ns
Reach SVHC Compliant Unknown
Max Collector Current 320A
Max Power Dissipation 1.1kW
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Continuous Collector Current 200A
Collector-emitter Voltage-Max 2.15V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.75V

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