FF300R12KE4HOSA1

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FF300R12KE4HOSA1 - Infineon
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Краткое описание: 1200V 460A N-Ch IGBT Module
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V collector-emitter breakdown voltage and 460A continuous collector current. This IGBT module offers a low collector-emitter saturation voltage of 2.15V and a maximum power dissipation of 1.6kW. Designed for chassis mounting with screw terminals, it includes an integrated NTC thermistor for temperature monitoring. Operating within a temperature range of -40°C to 150°C, this RoHS compliant component has a turn-on delay of 200ns and a turn-off delay of 500ns.
RoHS Compliant
Input Standard
Mount Chassis Mount, Screw
Height 31.4mm
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Halogen Free Not Halogen Free
Package/Case Module
NTC Thermistor Yes
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 19nF
Power Dissipation 1.6kW
Turn-On Delay Time 200ns
Radiation Hardening No
Turn-Off Delay Time 500ns
Reach SVHC Compliant Unknown
Max Collector Current 460A
Max Power Dissipation 1.6kW
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Continuous Collector Current 460A
Collector-emitter Voltage-Max 2.15V
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.15V

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