FF300R12KT4HOSA1

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FF300R12KT4HOSA1 - Infineon
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Краткое описание: 1200V 300A N-Ch IGBT Module
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) module featuring a 1200V Collector Emitter Breakdown Voltage and a 450A maximum continuous collector current. This device offers a 2.1V Collector Emitter Saturation Voltage and operates within a temperature range of -40°C to 150°C. With a 1.6kW maximum power dissipation, it is designed for chassis mount applications. The IGBT module includes standard input with 19nF input capacitance and exhibits turn-on delay time of 160ns and turn-off delay time of 450ns.
RoHS Compliant
Input Standard
Mount Chassis Mount, Screw
Series C
Polarity NPN
Lead Free Lead Free
Halogen Free Not Halogen Free
Package/Case Module
NTC Thermistor No
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 19nF
Power Dissipation 1.6kW
Turn-On Delay Time 160ns
Turn-Off Delay Time 450ns
Reach SVHC Compliant Unknown
Max Collector Current 450A
Max Power Dissipation 1.6kW
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Continuous Collector Current 300A
Collector-emitter Voltage-Max 2.15V
Collector Emitter Voltage (VCEO) 1.75V
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V

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