FF300R17KE4HOSA1

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FF300R17KE4HOSA1 - Infineon
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Краткое описание: 1700V 440A N-Ch IGBT Module
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. Features a 1700V collector-emitter breakdown voltage and a continuous collector current of 440A. Offers a maximum power dissipation of 1.8kW and a low collector-emitter saturation voltage of 2.45V. Includes a 24.5nF input capacitance and operates within a temperature range of -40°C to 150°C. Chassis mountable with screw terminals for secure installation.
RoHS Compliant
Input Standard
Mount Chassis Mount, Screw
Height 31.4mm
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Halogen Free Not Halogen Free
Package/Case Module
NTC Thermistor No
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 24.5nF
Power Dissipation 1.8kW
Turn-On Delay Time 240ns
Turn-Off Delay Time 700ns
Reach SVHC Compliant Unknown
Max Collector Current 440A
Max Power Dissipation 1.8kW
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Continuous Collector Current 440A
Collector-emitter Voltage-Max 2.3V
Collector Emitter Voltage (VCEO) 1.95V
Collector Emitter Breakdown Voltage 1.7kV
Collector Emitter Saturation Voltage 2.45V

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